The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Nov. 22, 2022
Applicant:

Shenzhen Newsonic Technologies Co., Ltd., Shenzhen, CN;

Inventors:

Guojun Weng, Shenzhen, CN;

Jian Wang, Shenzhen, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 3/02 (2006.01); H03H 9/05 (2006.01); H03H 9/13 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02086 (2013.01); H03H 3/02 (2013.01); H03H 9/0504 (2013.01); H03H 9/133 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device incudes: a first sub-semiconductor structure including a dielectric layer; and a second sub-semiconductor structure, at least including a carrier substrate, and being bonded to the first sub-semiconductor structure. The first sub-semiconductor structure or the second sub-semiconductor structure includes a charge accumulation preventing layer, and the charge accumulation preventing layer is disposed between the carrier substrate and the dielectric layer, and is configured to avoid an undesired conductive channel from being generated due to charge accumulation on a surface of the carrier substrate.


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