Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component

Abstract

In an embodiment, the optoelectronic semiconductor component () comprises a semiconductor layer sequence () with an active zone () for generating a radiation. On an bottom side () of the semiconductor layer sequence () there is an electrically insulating separation layer () with several openings (). An adhesion-promoting layer () is located next to the openings () on a side of the separation layer () facing away from the semiconductor layer sequence (). A continuous metallization layer () is located on a side of the adhesion-promoting layer () facing away from the semiconductor layer sequence (). The semiconductor layer sequence () is electrically contacted in the openings () directly by the metallization layer (). The metallization layer () and the openings () are spaced from the active zone () in the direction perpendicular to the separation layer ().