The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Apr. 21, 2022
Applicant:

Innolux Corporation, Miao-Li County, TW;

Inventors:

Kai Cheng, Miao-Li County, TW;

Tsau-Hua Hsieh, Miao-Li County, TW;

Fang-Ying Lin, Miao-Li County, TW;

Tung-Kai Liu, Miao-Li County, TW;

Hui-Chieh Wang, Miao-Li County, TW;

Chun-Hsien Lin, Miao-Li County, TW;

Jui-Feng Ko, Miao-Li County, TW;

Assignee:

INNOLUX CORPORATION, Miao-Li County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 25/16 (2023.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/62 (2013.01); H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of diodes on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of diodes from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of diodes from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of diodes from the third substrate to the fourth substrate. The pitch between the plurality of diodes on the first substrate is different from the pitch of the first pattern array.


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