The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Dec. 20, 2021
Applicant:
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventors:
Arnaud Yvon, Saint-Cyr sur Loire, FR;
Lionel Jaouen, Saint-Cyr sur Loire, FR;
Assignee:
STMicroelectronics (Tours) SAS, Tours, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 21/761 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8611 (2013.01); H01L 21/761 (2013.01); H01L 29/0623 (2013.01); H01L 29/66128 (2013.01); H01L 29/66136 (2013.01);
Abstract
A device includes a diode. The anode of the diode includes first, second, and third areas. The first area partially covers the second area and has a first doping level greater than a second doping level of the second area. The second area partially covers the third area and has the second doping level greater than a third doping level of the third area. A first insulating layer partially overlaps the first and second areas.