The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Mar. 03, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Jar-Ming Ho, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3733 (2013.01); H01L 21/02063 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05157 (2013.01); H01L 2224/05164 (2013.01);
Abstract

The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first pad above the substrate, forming a first redistribution conductive layer on the first pad, and forming a first redistribution thermal release layer on the first redistribution conductive layer. The first redistribution conductive layer and the first redistribution thermal release layer together form a first redistribution structure and the first redistribution thermal release layer is configured to sustain a thermal resistance between about 0.04° C. cm/Watt and about 0.25° C. cm/Watt.


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