The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Jul. 14, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yong-Ho Jeon, Hwaseong-si, KR;
Hyunwoo Choi, Seoul, KR;
Se-Koo Kang, Hwaseong-si, KR;
Miri Joung, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Methods of fabricating semiconductor devices comprise forming first active patterns vertically spaced apart on a first active fin of a substrate and second active patterns vertically spaced apart on a second active fin of the substrate that has a first region on which the first active fin is formed and a second region on which the second active fin is formed, forming a first electrode layer on the first and second active fins and the first and second active patterns, forming a first mask pattern overlapping the first electrode layer on the first region, forming a second mask pattern overlapping the first electrode layer on the second region, and using the second mask pattern as an etching mask to etch the first mask pattern and the first electrode layer on the first region to form a first electrode pattern on the second region.