The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Jun. 14, 2017
Applicant:
Sumco Corporation, Tokyo, JP;
Inventor:
Keiichiro Mori, Saga, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); B24B 37/005 (2012.01); G01N 21/95 (2006.01); G01N 21/956 (2006.01); G01Q 60/24 (2010.01); H01L 21/66 (2006.01); H01L 29/16 (2006.01); H01L 29/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67288 (2013.01); B24B 37/005 (2013.01); G01N 21/9501 (2013.01); G01N 21/956 (2013.01); G01Q 60/24 (2013.01); H01L 22/24 (2013.01); H01L 29/16 (2013.01); H01L 29/34 (2013.01);
Abstract
Provided is a method of evaluating a silicon wafer, the method including a first determination that determines the presence or absence of an abnormality by inspecting a surface of an evaluation-target silicon wafer with a light scattering type surface inspection device; and a second determination that determines the presence or absence of an abnormality through observing, with an atomic force microscope, a region of the surface of the evaluation-target silicon wafer, where the presence of an abnormality has not been confirmed in the first determination.