The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Dec. 09, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Zhepeng Cong, San Jose, CA (US);

Tao Sheng, Santa Clara, CA (US);

Vinh N. Tran, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); G01J 5/00 (2022.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67248 (2013.01); G01J 5/0007 (2013.01); H01L 21/3065 (2013.01);
Abstract

A method and apparatus for calibrating a temperature within a processing chamber are described. The method includes determining an etch rate of a layer within the processing chamber. The processing chamber is a deposition chamber configured for use during semiconductor manufacturing. The etch rate is utilized to determine a temperature within the processing chamber. The temperature within the processing chamber is then subsequently compared to a calibrated temperature to determine a temperature offset. The etch rate is determined using any one of a pyrometer, a reflectometer, a camera, or a mass sensor.


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