The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Sep. 02, 2022
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Tom E. Blomberg, Vantaa, FI;
Varun Sharma, Maunula, FI;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/3065 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67063 (2013.01); C23C 16/4412 (2013.01); C23C 16/45559 (2013.01); H01J 37/3244 (2013.01); H01L 21/3065 (2013.01);
Abstract
To create constant partial pressures of the by-products and residence time of the gas molecules across the wafer, a dual showerhead reactor can be used. A dual showerhead structure can achieve spatially uniform partial pressures, residence times and temperatures for the etchant and for the by-products, thus leading to uniform etch rates across the wafer. The system can include differential pumping to the reactor.