The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Oct. 26, 2020
Applicant:
Beijing Naura Microelectronics Equipment Co., Ltd., Beijing, CN;
Inventors:
Assignee:
BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/764 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/764 (2013.01); H10B 12/01 (2023.02);
Abstract
An etching method for selectively etching a silicon oxide film on a wafer surface that includes the silicon oxide film and a silicon nitride film includes: a surface layer removal process including: etching the silicon oxide film at a first etching rate and removing a surface modification layer covering on the silicon nitride film; and an etching process including: etching the silicon oxide film at a second etching rate. The first etching rate is smaller than the second etching rate.