The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Mar. 14, 2022
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yoshiki Kamata, Meguro Tokyo, JP;

Yoshiaki Asao, Kawasaki Kanagawa, JP;

Yukihiro Nomura, Taito Tokyo, JP;

Misako Morota, Koga Ibaraki, JP;

Daisaburo Takashima, Yokohama Kanagawa, JP;

Takahiko Iizuka, Kamakura Kanagawa, JP;

Shigeru Kawanaka, Yokohama Kanagawa, JP;

Assignee:

Kioxia Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 5/06 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 5/06 (2013.01); H10B 63/30 (2023.02); H10N 70/826 (2023.02); G11C 2013/0078 (2013.01); G11C 2213/75 (2013.01);
Abstract

According to one embodiment, a memory device includes a stacked structure including a plurality of conductive layers stacked to be apart from each other in a first direction, and a pillar structure including a resistance change portion extending in the first direction in the stacked structure, and a semiconductor portion which extends in the first direction in the stacked structure and which includes a first portion provided along the resistance change portion and a second portion extending from the first portion in at least one direction intersecting the first direction.


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