The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Oct. 08, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jungyu Lee, Hwaseong-si, KR;

Hyunkook Parak, Anyang-si, KR;

Jongryul Kim, Dangjin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0038 (2013.01); G11C 13/0069 (2013.01);
Abstract

A memory device includes a phase change memory (PCM) cell connected between a bit line and a word line. An X-decoder provides a word line voltage to the word line during a reset operation, and a Y-decoder provides a bit line voltage to the bit line during the reset operation. A voltage bias circuit generates the word line voltage and the bit line voltage based on a first bias during a first period of the reset operation, the word line voltage and the bit line voltage based on a second bias greater than the first bias during a second period of the reset operation, and the word line voltage and the bit line voltage based on a third bias smaller than the first and second biases during a third period of the reset operation.


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