The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Oct. 16, 2019
Applicant:

Sciosense B.v., AE Eindhoven, NL;

Inventors:

Alessandro Faes, Premstätten, AT;

Jörg Siegert, Graz, AT;

Willem Frederik Adrianus Besling, JN Eindhoven, NL;

Remco Henricus Wilhelmus Pijnenburg, AE Hoogeloon, NL;

Assignee:

Sciosense B.V., AE Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0073 (2013.01); B81B 3/0021 (2013.01); B81C 1/00595 (2013.01); G01L 9/0042 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01); B81B 2207/015 (2013.01); B81C 2201/0109 (2013.01); B81C 2201/0133 (2013.01); B81C 2201/014 (2013.01);
Abstract

In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.


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