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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11943994 B1

PDFFull Text
Date of Patent:
Mar. 26, 2024

Filed:

Aug. 17, 2021

Display device of reducing the occurrence of optical afterimages and method of manufacturing the same

Applicant:

Samsung Display Co., Ltd., Yongin-Si, KR;

Inventors:

Chul Min Bae, Hwaseong-si, KR;

Eun Jin Kwak, Hwaseong-si, KR;

Jin Suk Lee, Gwangmyeong-si, KR;

Jung Yun Jo, Namyangju-si, KR;

Ji Hye Han, Seoul, KR;

Young In Hwang, Suwon-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:

Innovation Counsel LLP

Primary Examiner:

J E Schoenholtz

Int. Cl.
CPC ...
H10K 77/10 (2023.01); C23C 14/18 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 28/00 (2006.01); G09G 3/3233 (2016.01); H10K 50/844 (2023.01); H10K 59/12 (2023.01); H10K 71/00 (2023.01); H10K 71/80 (2023.01);
U.S. Cl.
CPC ...
H10K 77/111 (2023.02); C23C 14/18 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 28/30 (2013.01); H10K 50/844 (2023.02); H10K 59/12 (2023.02); H10K 71/00 (2023.02); H10K 71/80 (2023.02); G09G 3/3233 (2013.01); G09G 2300/0443 (2013.01); G09G 2300/0809 (2013.01); H10K 59/1201 (2023.02);
Abstract

A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

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