The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11943948 B1

Date of Patent:

Mar. 26, 2024

Filed:

Dec. 26, 2019

Light emitting device

Applicant:

Pioneer Corporation, Tokyo, JP;

Inventors:

Akira Hirasawa, Tokyo, JP;

Yuhki Terao, Tokyo, JP;

Assignee:

PIONEER CORPORATION, Tokyo, JP;

Attorney:

Procopio, Cory, Hargreaves & Savitch LLP

Primary Examiner:

Mohammad A Rahman

Int. Cl.

CPC ...

H10K 50/17 (2023.01); H10K 50/15 (2023.01); H10K 71/00 (2023.01); H10K 102/00 (2023.01);

U.S. Cl.

CPC ...

H10K 50/17 (2023.02); H10K 50/156 (2023.02); H10K 71/00 (2023.02); H10K 2102/00 (2023.02); H10K 2102/351 (2023.02);

Abstract

The first region (RG) contains a first organic material and a metal compound (a compound containing a metal element). The second region (RG) contains the first organic material and the metal compound. The average intensity of the SIMS profile of the metal element in the second region (RG) can be lower than the average intensity of the SIMS profile of the metal element in the first region (RG). Specifically, the average intensity of the SIMS profile of the metal element in the second region (RG) can be lower than 10%, preferably lower than 1.0%, of the average intensity of the SIMS profile of the metal element in the first region (RG).

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