The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

G11C 16/04 (2006.01); G11C 13/00 (2006.01); G11C 16/10 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);

U.S. Cl.

CPC ...

H10B 43/27 (2023.02); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); H10B 41/27 (2023.02); H10B 63/34 (2023.02); H10B 63/845 (2023.02); H10N 70/231 (2023.02); G11C 2213/75 (2013.01);

Abstract

A semiconductor memory device and methods of manufacturing and operating the same are set forth. The semiconductor memory device includes a stack structure including a plurality of interlayer insulating layers and a plurality of gate electrodes, which may be alternately stacked on a substrate, and a plurality of channel structures penetrating the stack structure in a vertical direction. Each of the plurality of channel structures includes a channel layer, a tunnel insulating layer, an emission preventing layer, and a charge storage layer, each of which vertically extends toward the substrate.

Find Patent Forward Citations

Lee, Dong. (2024). Semiconductor memory device and methods of manufacturing and operating the same (U.S. Patent No. 11943930). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11943930

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