logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11943919 B1

PDFFull Text
Date of Patent:
Mar. 26, 2024

Filed:

Aug. 16, 2021

Microelectronic devices including two-dimensional materials, and related memory devices and electronic systems

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kamal M. Karda, Boise, ID (US);

Akira Goda, Tokyo, JP;

Sanh D. Tang, Meridian, ID (US);

Gurtej S. Sandhu, Boise, ID (US);

Litao Yang, Boise, ID (US);

Haitao Liu, Boise, ID (US);

Assignee:
Attorney:

TraskBritt

Primary Examiner:

Cheung Lee

Int. Cl.
CPC ...
H10B 41/35 (2023.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 41/35 (2023.02); H01L 21/76877 (2013.01); H01L 21/823412 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 29/24 (2013.01); H01L 29/78621 (2013.01); H01L 29/78681 (2013.01); H01L 29/78696 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

A transistor comprises a 2D material structure and a gate structure. The 2D material structure conformally extends on and between surfaces of dielectric fin structures extending in parallel in a first horizontal direction, and comprises a source region, a drain region, and a channel region positioned between the source region and the drain region in the first horizontal direction. The gate structure overlies the channel region of the 2D material structure and extends in a second horizontal direction orthogonal to the first horizontal direction. The gate structure is within horizontal boundaries of the channel region of the 2D material structure in the first horizontal direction. Microelectronic devices, memory devices, and electronic systems are also described.

Find Patent Forward Citations

Karda, Kamal. (2024). Microelectronic devices including two-dimensional materials, and related memory devices and electronic systems (U.S. Patent No. 11943919). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11943919

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…