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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11943916 B1

PDFFull Text
Date of Patent:
Mar. 26, 2024

Filed:

Apr. 16, 2021

Semiconductor device including dummy pillar and electronic system

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seongjae Go, Suwon-si, KR;

Jongsoo Kim, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Jahae Kim

Int. Cl.
CPC ...
H10B 41/27 (2023.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 41/40 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 41/40 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device includes a stack structure including mold layers and horizontal conductive layers, which are alternately stacked. A channel structure vertically extending in the stack structure is provided. A pillar structure vertically extending in the stack structure is provided. A contact plug connected to a corresponding one of the horizontal conductive layers is disposed. The pillar structure includes a pillar extending through the horizontal conductive layers, and extensions protruding from a side surface of the pillar. Each extension is horizontally aligned with a corresponding one of the horizontal conductive layers.

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