The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Jun. 20, 2022
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Dong-Soo Kim, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/3215 (2006.01); H01L 21/762 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H10B 12/34 (2023.02); H01L 21/28088 (2013.01); H01L 21/28176 (2013.01); H01L 21/28194 (2013.01); H01L 21/32136 (2013.01); H01L 21/32155 (2013.01); H01L 21/76224 (2013.01); H01L 29/4236 (2013.01); H01L 29/4966 (2013.01); H01L 29/4983 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H10B 12/053 (2023.02); H10B 12/056 (2023.02); H10B 12/36 (2023.02); H01L 21/31053 (2013.01); H01L 29/517 (2013.01);
Abstract
A semiconductor device includes: a gate trench formed into a semiconductor substrate; a gate dielectric layer formed in the gate trench to cover an inside surface of the gate trench; and a gate electrode disposed over the gate dielectric layer to fill the gate trench, wherein the gate electrode includes: second crystal grains formed in the gate trench; and first crystal grains disposed between the second crystal grains and the gate dielectric layer and having a smaller crystal grain size than the second crystal grains.