The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Nov. 08, 2021
Qualcomm Incorporated, San Diego, CA (US);
Wilson Jianbo Chen, San Diego, CA (US);
Aliasgar Presswala, Woodland Hills, CA (US);
Chiew-Guan (Kelvin) Tan, San Diego, CA (US);
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
An aspect of the disclosure relates to an apparatus including a first field effect transistor (FET) including a first gate configured to receive a first input signal that varies in accordance with a first voltage domain; and a first inverter including a first input configured to receive a second input signal that varies in accordance with a second voltage domain, and a first output configured to generate a first output signal that varies in accordance with the second voltage domain, wherein the first output signal is based on the first and second input signals, and wherein the first FET and the first inverter are coupled in series between first and second voltage rails. Per another aspect, the apparatus includes additional circuitry to allow the apparatus to process signals in accordance with a third voltage domain.