The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Aug. 13, 2020
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Calin Purcarea, Muehlacker, DE;

Daniel Schweiker, Ludwigsburg, DE;

Deepa Mathai, Stuttgart, DE;

Falko Friese, Ludwigsburg, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 17/082 (2006.01); H03K 17/0812 (2006.01); H03K 17/18 (2006.01);
U.S. Cl.
CPC ...
H03K 17/0828 (2013.01); H03K 17/08128 (2013.01); H03K 17/0822 (2013.01); H03K 17/18 (2013.01);
Abstract

The present invention relates to a method for short-circuit detection by saturation detection in power semiconductor switches and to a corresponding device. A reference voltage (U) is provided as a function of a supply voltage (UVDD) of a power semiconductor switch. A differential voltage (U) is generated from the difference of a voltage drop (U) of a load path of the power semiconductor switch and the provided reference voltage (U). The generated differential voltage (U) is compared with a predetermined threshold voltage (U). A short-circuit current in the load path of the power semiconductor switch is detected when the differential voltage (U) exceeds the threshold voltage (U). In this case, the power semiconductor switch is opened.


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