The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Jan. 11, 2021
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

John A. Logan, Lawrence, MA (US);

Jason C. Soric, North Andover, MA (US);

Adam E. Peczalski, Everett, MA (US);

Brian D. Schultz, Lexington, MA (US);

Eduardo M. Chumbes, Andover, MA (US);

Assignee:

Raytheon Company, Tewksbury, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); H03H 3/04 (2006.01); H03H 9/17 (2006.01); H03H 3/02 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02133 (2013.01); H03H 3/04 (2013.01); H03H 9/02031 (2013.01); H03H 9/02102 (2013.01); H03H 9/174 (2013.01); H03H 9/176 (2013.01); H03H 2003/023 (2013.01); H03H 2003/0407 (2013.01);
Abstract

A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial layer formed on the first epitaxial layer opposite the top surface of the substrate, the second epitaxial layer comprising single-crystal scandium aluminum nitride material; and a third epitaxial layer formed on the second epitaxial layer opposite the first epitaxial layer, the third layer comprising single-crystal aluminum nitride material.


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