The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Jun. 15, 2020
Applicant:

Xiamen San'an Optoelectronics Co., Ltd., Fujian Province, CN;

Inventors:

Dongyan Zhang, Tianjin, CN;

Yuehua Jia, Tianjin, CN;

Cheng Meng, Tianjin, CN;

Jing Wang, Tianjin, CN;

Chun-I Wu, Tianjin, CN;

Duxiang Wang, Tianjin, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0095 (2013.01); H01L 27/156 (2013.01); H01L 33/62 (2013.01);
Abstract

A light-emitting diode device includes an epitaxial structure that contains first-type and second-type semiconductor units and an active layer interposed therebetween, a light transmittable dielectric element that is disposed on the first-type semiconductor unit opposite to the active layer and is formed with a first through hole, an adhesive layer that is disposed on the dielectric element and is formed with a second through hole corresponding in position to the first through hole, and a metal contact element that is disposed on the adhesive layer. The adhesive layer has a thickness of at most one fifth of that of the dielectric element. The metal contact element extends into the first and second through holes, and electrically contacts the first-type semiconductor unit. A method for manufacturing the LED device is also disclosed.


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