The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Sep. 10, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Shotaro Baba, Kanazawa Ishikawa, JP;
Hiroaki Katou, Nonoichi Ishikawa, JP;
Yuhki Fujino, Kanazawa Ishikawa, JP;
Kouta Tomita, Nonoichi Ishikawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a polycrystalline silicon part buried in a termination region of a silicon layer. The polycrystalline silicon part contacts the silicon layer, has a higher crystal grain density than the silicon layer, and includes a heavy metal. The silicon layer includes a drift layer located in a cell region and the termination region. The drift layer has a lower first-conductivity-type impurity concentration than a silicon substrate. The drift layer includes a same element of heavy metal as the heavy metal included in the polycrystalline silicon part.