The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Mar. 05, 2021
Applicant:

Lumileds Llc, San Jose, CA (US);

Inventors:

Erik William Young, San Jose, CA (US);

Dennis Scott, Dublin, CA (US);

Rajat Sharma, San Jose, CA (US);

Toni Lopez, Aachen, DE;

Yu-Chen Shen, San Jose, CA (US);

Assignee:

Lumileds LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/24 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01);
U.S. Cl.
CPC ...
H01L 27/156 (2013.01); H01L 33/007 (2013.01); H01L 33/24 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. Each of the mesas is spaced so that there is a pixel pitch in a range of from 10 μm to 100 μm and dark space gap between adjacent edges of p-contact layer. The dark space gap may be less than 20% of the pixel pitch. The dark space gap may be in a range of from 4 μm to 10 μm.


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