The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Mar. 15, 2023
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Nobuyuki Endo, Fujisawa, JP;
Tetsuya Itano, Sagamihara, JP;
Kazuo Yamazaki, Yokohama, JP;
Kyouhei Watanabe, Yokohama, JP;
Takeshi Ichikawa, Hachioji, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/02 (2006.01); H04N 25/76 (2023.01); H04N 25/767 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14634 (2013.01); H01L 27/14612 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14687 (2013.01); H01L 27/1469 (2013.01); H01L 31/02 (2013.01); H04N 25/76 (2023.01); H04N 25/767 (2023.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01);
Abstract
An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.