The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Aug. 13, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventor:

Jae Hyung Jang, Icheon-si, KR;

Assignee:

SK HYNIX INC., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 27/146 (2006.01); H04N 25/75 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 27/14625 (2013.01); H01L 27/1463 (2013.01); H04N 25/75 (2023.01);
Abstract

An image sensing device includes a semiconductor substrate, a photoelectric conversion region structured to generate charge carriers from incident light and capture the charge carriers using an electric potential difference caused by a demodulation control signal applied to the photoelectric conversion region, and a circuit region disposed adjacent to the photoelectric conversion region, the circuit region including a plurality of pixel transistors that generate and output a pixel signal corresponding to the charge carriers captured by the photoelectric conversion region. The circuit region includes a first well region formed to have a first length in a first direction, and a second well region formed below the first well region such that a lower end of the first well region is in contact with an upper end of the second well region, and formed to have a second length shorter than the first length in the first direction.


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