The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Jul. 28, 2022
Applicant:
Japan Display Inc., Tokyo, JP;
Inventors:
Assignee:
Japan Display Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G06F 1/26 (2006.01); H02J 13/00 (2006.01); H04L 41/069 (2022.01); H04L 47/2416 (2022.01); H04L 67/12 (2022.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01); H04Q 9/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); G06F 1/26 (2013.01); H01L 27/1237 (2013.01); H01L 27/1248 (2013.01); H01L 27/1251 (2013.01); H02J 13/00 (2013.01); H02J 13/00016 (2020.01); H04L 41/069 (2013.01); H04L 47/2416 (2013.01); H04L 67/12 (2013.01); H01L 29/42384 (2013.01); H01L 2029/42388 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/518 (2013.01); H01L 29/78606 (2013.01); H01L 29/78633 (2013.01); H01L 29/78675 (2013.01); H01L 29/7869 (2013.01); H04Q 9/02 (2013.01); H04Q 2209/826 (2013.01);
Abstract
A semiconductor device includes an insulating substrate, a first semiconductor layer formed of silicon and positioned above the insulating substrate, a second semiconductor layer formed of a metal oxide and positioned above the first semiconductor layer, a first insulating film formed of a silicon nitride and positioned between the first semiconductor layer and the second semiconductor layer, and a block layer positioned between the first semiconductor film and the second semiconductor layer, the block layer hydrogen diffusion of which is lower than that of the first insulating film.