The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Apr. 19, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Chih-Ying Tsai, New Taipei, TW;

Jui-Seng Wang, New Taipei, TW;

Yi-Yi Chen, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); G11C 5/06 (2006.01); H01L 27/108 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); G11C 5/063 (2013.01); H01L 23/5283 (2013.01); H10B 12/0335 (2023.02); H10B 12/053 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/485 (2023.02);
Abstract

The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate, a contact structure, a first conductive element, and a first dielectric spacer structure. The semiconductor substrate includes an active region and an isolation structure. The contact structure is on the active region of the semiconductor substrate. The first conductive element is on the isolation structure of the semiconductor substrate. The first dielectric spacer structure is between the contact structure and the first to conductive element. The first dielectric spacer structure has a first concave surface facing the first conductive element.


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