The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
May. 14, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Noritsugu Nomura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
When a voltage is applied to a semiconductor element formed into a semiconductor substrate for evaluating the electrical characteristic of the semiconductor element, partial discharge between the semiconductor element and an inter-element portion, adhesion of a foreign substance to the semiconductor substrate, and formation of a trace of a component in the semiconductor substrate are prevented. A semiconductor device includes a semiconductor substrate and a discharge inhibitor. The semiconductor substrate includes a plurality of semiconductor elements and an inter-element portion. The semiconductor elements are arranged in a spreading direction of the semiconductor substrate. The inter-element portion is between adjacent semiconductor elements among the semiconductor elements. The discharge inhibitor is bonded not to a surface of a center of each semiconductor element among the semiconductor elements but to a surface of the inter-element portion. The discharge inhibitor is made of an insulator.