The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Nov. 30, 2021
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Abbas Ali, Plano, TX (US);
Christopher Scott Whitesell, Garland, TX (US);
Brian K. Kirkpatrick, Allen, TX (US);
Byron Joseph Palla, Murphy, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, P.O. Box 655474, M/S 3999 Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/76202 (2013.01); H01L 27/0203 (2013.01); H01L 29/0649 (2013.01);
Abstract
Forming an integrated circuit, for example by first, concurrently forming a first front end of line (FEOL) layer having a first thickness and a surface contacting or facing a semiconductor substrate frontside and a second FEOL layer, having a second thickness and including a same material as the first FEOL layer and having a surface contacting or facing a semiconductor substrate backside, and second, processing the second FEOL layer to reduce the second thickness.