The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Dec. 02, 2021
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01S 5/12 (2021.01); H01S 5/125 (2006.01); H01S 5/20 (2006.01); H01S 5/22 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01S 5/1231 (2013.01); H01S 5/125 (2013.01); H01S 5/209 (2013.01); H01S 5/22 (2013.01); H01S 5/2202 (2013.01); H01S 5/3401 (2013.01); H01S 5/12 (2013.01); H01S 2301/176 (2013.01);
Abstract
A method for forming a Bragg reflector includes after forming first trenches in the stack, which are intended to form structures of the distributed Bragg reflector, forming a sacrificial interlayer at least in the first trenches, depositing a second masking layer at least inside the first trenches, forming second trenches intended to form sidewalls of the laser, removing the second masking layer from inside the first trenches, removing said sacrificial interlayer so as to remove, by lift-off, residues of the second masking layer that remain inside the first trenches, and filling said first trenches with at least one metal material.