The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Jan. 06, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventor:
Ketankumar Harishbhai Tailor, Dresden, DE;
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01); H01L 21/3215 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/0257 (2013.01); H01L 21/3215 (2013.01); H01L 27/0617 (2013.01); H01L 29/66803 (2013.01);
Abstract
A transistor structure is disclosed. The transistor structure includes a dielectric layer that has a thinner portion over a first doped well and a second doped well, and a thicker portion adjacent the thinner portion and over the second doped well. The thicker portion has a height greater than the thinner portion above the doped wells. The transistor includes a first gate structure on the thinner portion and a second gate structure on the thicker portion of the dielectric layer. The transistor may include a third gate structure on the thicker portion.