The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 26, 2024

Filed:

Apr. 30, 2020
Applicant:

Board of Regents, the University of Texas System, Austin, TX (US);

Inventors:

Joseph S. Friedman, Dallas, TX (US);

Naimul Hassan, Dallas, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract

A magnetic tunnel junction is provided. The magnetic tunnel junction comprises an insulating tunnel barrier and a fixed ferromagnet layer adjacent the tunnel barrier. The fixed ferromagnet comprises a fixed magnetization along an easy axis approximately normal to an interface between the fixed ferromagnet and the tunnel barrier. A free ferromagnet layer is adjacent the tunnel barrier on the side opposite the fixed ferromagnet. The free ferromagnet layer comprises a bistable magnetization along the easy axis that can switch between a parallel state and an anti-parallel state with the fixed ferromagnet. A heavy metal layer is adjacent the free ferromagnet on the side opposite the tunnel barrier. A unidirectional electric current pulse through the heavy metal layer switches the bistable magnetization of the free ferromagnet, thereby switching an electrical resistance state of the magnetic tunnel junction.


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