The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Dec. 09, 2021
Shanghai Jiao Tong University, Shanghai, CN;
Shanghai Jiao Tong University, Shanghai, CN;
Abstract
A high-speed and low-voltage electro-optical modulator based on a lithium niobate-silicon wafer. A silicon wafer is located above a lithium niobate wafer; a lithium niobate-silicon hybrid waveguide is formed by etching a silicon waveguide; and the power of light waves is differently distributed in the lithium niobate-silicon hybrid waveguide by changing the structure of the silicon waveguide. When higher power is distributed in the silicon waveguide, the high-speed and low-voltage electro-optical modulator is suitable for realizing a compact wave splitting function, a wave combining function and a thermo-optical modulation function; and when higher power is distributed in the lithium niobate waveguide, the high-speed and low-voltage electro-optical modulator is suitable for realizing a high-speed and low-voltage electro-optical modulation function. The present invention takes advantage of the lithium niobate and silicon material platforms respectively, and is suitable for high-speed and low-voltage electro-optical modulation.