The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Mar. 19, 2019
Applicant:
Soitec, Bernin, FR;
Inventor:
Bruno Ghyselen, Seyssinet, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/414 (2006.01); B01L 3/00 (2006.01); H01L 21/306 (2006.01); H01L 21/762 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4148 (2013.01); B01L 3/502715 (2013.01); H01L 21/30604 (2013.01); H01L 21/76254 (2013.01); B01L 2200/12 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01);
Abstract
A microsensor for detecting ions in a fluid, comprises: a field-effect transistor having a source, a drain, an active region between the source and the drain, and a gate disposed above the active region, an active layer, in which the active region is formed, a dielectric layer positioned beneath the active layer, a support substrate disposed under the dielectric layer and comprising at least one buried cavity located plumb with the gate of the field-effect transistor in order to receive the fluid.