The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Oct. 22, 2021
Denso Corporation, Kariya, JP;
Nagano Keiki Co., Ltd., Tokyo, JP;
Hiroshi Kodama, Tokyo, JP;
Naoki Yoshida, Tokyo, JP;
Kaori Miyashita, Tokyo, JP;
Eiji Takeda, Tokyo, JP;
Nobuaki Yamada, Tokyo, JP;
Yoshihiro Tomomatsu, Tokyo, JP;
Yasushi Yanagisawa, Tokyo, JP;
Yusuke Midorikawa, Tokyo, JP;
Shirou Kamanaru, Kariya, JP;
Kenichi Yokoyama, Kariya, JP;
Inao Toyoda, Kariya, JP;
Hisayuki Takeuchi, Kariya, JP;
Naohisa Niimi, Kariya, JP;
Masao Takahashi, Kariya, JP;
Yasutake Ura, Kariya, JP;
Kouji Asano, Kariya, JP;
Yukihiro Kamada, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
NAGANO KEIKI CO., LTD., Tokyo, JP;
Abstract
A pressure sensor has a stem in which a pressure introduction hole into which a pressure medium is introduced and a diaphragm deformable according to the pressure of the pressure medium are formed, and a strain detecting element which is arranged on the diaphragm via an insulating film and being configured to output a detection signal according to the deformation of the diaphragm. The strain detecting element is configured to have a portion made of polysilicon. A low doping layer having a higher electrical resistivity than polysilicon and a higher crystallinity than the insulating film is arranged between the insulating film and the strain detecting element.