The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
Aug. 30, 2021
Enf Technology Co., Ltd., Yongin-si, KR;
Dong Hyun Kim, Yongin-si, KR;
Hyeon Woo Park, Yongin-si, KR;
Sung Jun Hong, Yongin-si, KR;
Myung Ho Lee, Hwaseong-si, KR;
Myung Geun Song, Yongin-si, KR;
Hoon Sik Kim, Yongin-si, KR;
Jae Jung Ko, Seoul, KR;
Myong Euy Lee, Yongin-si, KR;
Jun Hyeok Hwang, Seoul, KR;
ENF Technology Co., Ltd., Yongin-Si, KR;
Abstract
Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.