The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Feb. 08, 2021
Applicant:

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun Jilin, CN;

Inventors:

Gunter Larisch, Neuenhagen, DE;

Sicong Tian, Changchun Jilin, CN;

Dieter Bimberg, Berlin, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18311 (2013.01); H01S 5/18352 (2013.01); H01S 5/18394 (2013.01);
Abstract

A method of fabricating a radiation emitter including fabricating a layer stack that includes a first reflector, at least one intermediate layer, an active region and a second reflector; locally oxidizing the intermediate layer and thereby forming at least one unoxidized aperture; and locally removing the layer stack, and thereby forming a mesa that includes the first reflector, the unoxidized aperture, the active region, and the second reflector. Before or after locally removing the layer stack and forming the mesa: forming at least a first unoxidized aperture and at least a second unoxidized aperture inside the intermediate layer; etching a trench inside the layer stack, the trench defining a first portion and a second portion of the mesa, wherein the trench severs the intermediate layer(s) so that the first aperture is located in the first portion and the second aperture is located in the second portion of the mesa.


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