The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

May. 15, 2020
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Fabian Kopp, Tanjung Tokong Penang, MY;

Attila Molnar, Gelugor Penang, MY;

Roland Heinrich Enzmann, Gelugor Penang, MY;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 33/387 (2013.01); H01L 31/022408 (2013.01); H01L 31/1856 (2013.01); H01L 33/0062 (2013.01); H01L 33/42 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01);
Abstract

An optoelectronic semiconductor chip may include a first region doped with a first dopant, a second region doped with a second dopant, an active region between the first and second regions, a first contact layer having an electrically conductive material and covering the first region. An insulating layer may cover the first contact layer and include first openings, and the insulating layer may include a second contact layer having an electrically conductive material and covering the insulating layer and the first openings. The first openings may completely penetrate the insulating layer, and the second contact layer may include second openings and/or a third contact layer comprising an electrically conductive material is arranged in the first openings in each case between the second contact layer and the insulating layer.


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