The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Oct. 25, 2022
Applicant:

Lumileds Llc, San Jose, CA (US);

Inventors:

Toni Lopez, Vaals, NL;

Erik William Young, San Jose, CA (US);

Rajiv Pathak, Milpitas, CA (US);

Assignee:

Lumileds LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 27/156 (2013.01); H01L 33/0093 (2020.05); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A light emitting diode (LED) array comprises non-segmented pixels in a light-emitting pixel area providing optical efficiency and minimizing dark-grid appearance. The LED array comprises: a monolithic body, a light-emitting pixel area, a plurality of anodes, a common cathode, and one or more dielectric materials. The light-emitting pixel area is integral to the monolithic body. The light-emitting pixel area includes semiconductor layers comprising: a second portion of an N-type layer, an active region, and a P-type layer. The monolithic body comprises a first portion of an N-type layer, and the second portion of the N-type layer is integral to the first portion of the N-type layer. Each anode comprises a P-contact layer and one or more P-contact materials, each P-contact layer is in contact with the P-type layer. The common cathode comprises one or more N-contact materials in contact with the first portion of the N-type layer.


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