The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Jun. 30, 2021
Epistar Corporation, Hsinchu, TW;
Chu-Jih Su, Hsinchu, TW;
Chia-Hsiang Chou, Hsinchu, TW;
Wei-Chih Peng, Hsinchu, TW;
Wen-Luh Liao, Hsinchu, TW;
Chao-Shun Huang, Hsinchu, TW;
Hsuan-Le Lin, Hsinchu, TW;
Shih-Chang Lee, Hsinchu, TW;
Mei Chun Liu, Hsinchu, TW;
Chen Ou, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.