The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Nov. 09, 2020
Epistar Corporation, Hsinchu, TW;
Shih-Chang Lee, Hsinchu, TW;
Shiuan-Leh Lin, Hsinchu, TW;
I-Hung Chen, Hsinchu, TW;
Chu-Jih Su, Hsinchu, TW;
Chao-Shun Huang, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.