The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Nov. 01, 2021
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Dong-Soo Kim, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/28 (2006.01); H01L 21/3115 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/28061 (2013.01); H01L 21/28185 (2013.01); H01L 21/28238 (2013.01); H01L 21/3115 (2013.01); H01L 29/4236 (2013.01); H01L 29/4941 (2013.01); H10B 12/053 (2023.02); H10B 12/34 (2023.02);
Abstract
Disclosed is a semiconductor device for improving a gate induced drain leakage and a method for fabricating the same, and the method for fabricating semiconductor device may include forming a trench in a substrate; forming a gate dielectric layer over the trench, embedding a first dipole inducing portion in the gate dielectric layer on a lower side of the trench, filling a lower gate over the first dipole inducing portion, embedding a second dipole inducing portion in the gate dielectric layer on an upper side of the trench and forming an upper gate over the lower gate.