The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Aug. 01, 2022
Mitsubishi Electric Corporation, Tokyo, JP;
Yoshinori Matsuno, Tokyo, JP;
Yasushi Takaki, Tokyo, JP;
Kensuke Taguchi, Tokyo, JP;
Kosuke Miyazaki, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device includes forming, on first and second impurity layers on a termination region side, an insulating layer, forming a first metal film and a second metal film in this order on the insulating layer and a drift layer, performing dry etching on the first and second metal films all together so that a position of a first end of a metallized layer, which is a remaining part of the first metal film, in the interface region on the termination region side and a position of a second end of an electrode, which is a remaining part of the second metal film, in the interface region on the terminal region side are the same in plan view. The first and second ends are closer to the active region than an end of the second impurity layer on the termination region side in plan view.