The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Nov. 30, 2021
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Tomas Manuel Reiter, Munich, DE;

Waldemar Jakobi, Soest, DE;

Michael Niendorf, Verl, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 23/49811 (2013.01); H01L 24/48 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A power semiconductor module arrangement includes a power electronics substrate comprising a first DC voltage pad, a second DC voltage pad, a first load pad, and a second load pad, first and second transistor dies mounted on the first load pad, third and fourth transistor dies mounted the first DC voltage pad, the first and second transistor dies collectively form a first switch, the third and fourth transistor dies collectively form a second switch, the first and second DC voltage pads are arranged such that a DC supply impedance for a first commutation loop that flows through the first and third transistor dies matches a DC supply impedance for a second commutation loop that flows through the second and fourth transistor dies, and an impedance of a first load connection to the third transistor die is greater than an impedance of a second load connection to the fourth transistor die.


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