The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Nov. 30, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Kuo-Hui Su, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/03616 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05087 (2013.01); H01L 2224/05088 (2013.01); H01L 2224/05098 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05172 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/13026 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01027 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0104 (2013.01); H01L 2924/01044 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/04541 (2013.01); H01L 2924/0455 (2013.01); H01L 2924/0469 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/0509 (2013.01);
Abstract

The present application discloses a method for fabricating a semiconductor device with slanted conductive layers. The method for fabricating a semiconductor device includes providing a substrate, forming a first insulating layer above the substrate, forming first slanted recesses along the first insulating layer, and forming first slanted conductive layers in the first slanted recesses and a top conductive layer covering the first slanted conductive layers.


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