The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Dec. 14, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyo-Jin Kim, Bucheon-si, KR;

Chang-Hwa Kim, Hwaseong-si, KR;

Hwi-Chan Jun, Yongin-si, KR;

Chul-Hong Park, Seongnam-si, KR;

Jae-Seok Yang, Hwaseong-si, KR;

Kwan-Young Chun, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01); H01L 27/088 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76826 (2013.01); H01L 21/76829 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 21/845 (2013.01); H01L 27/088 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01); H01L 21/76831 (2013.01); H01L 21/76889 (2013.01); H01L 21/823481 (2013.01);
Abstract

A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.


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