The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
May. 04, 2020
Applicant:
Lotus Applied Technology, Llc, Hillsboro, OR (US);
Inventor:
Eric R. Dickey, Hillsboro, OR (US);
Assignee:
Lotus Applied Technology, LLC, Hillsboro, OR (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/503 (2006.01); H01L 21/02 (2006.01); H01L 21/441 (2006.01);
U.S. Cl.
CPC ...
H01L 21/441 (2013.01); C23C 16/34 (2013.01); C23C 16/401 (2013.01); C23C 16/402 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); C23C 16/503 (2013.01); H01L 21/0228 (2013.01);
Abstract
Atomic layer deposition (ALD) methods and barrier films are disclosed. A method of performing ALD includes placing a substrate proximal an electrode coupled to a power supply, exposing the substrate to an oxygen-containing gas or a nitrogen-containing gas at or below 0.8 Torr, and applying, with the power supply, a voltage to the electrode of at least 700 Volts to induce a plasma state in the oxygen-containing gas or the nitrogen-containing gas proximal the substrate. High quality barrier films can be made with the methods.