The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2024
Filed:
Mar. 09, 2023
Applicant:
Sumco Corporation, Tokyo, JP;
Inventor:
Ryosuke Okuyama, Tokyo, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/265 (2006.01); H01L 21/30 (2006.01); H01L 21/322 (2006.01); H01L 21/324 (2006.01); H01L 27/146 (2006.01); H01L 29/04 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02658 (2013.01); H01L 21/02365 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 21/20 (2013.01); H01L 21/265 (2013.01); H01L 21/26566 (2013.01); H01L 21/3003 (2013.01); H01L 21/3223 (2013.01); H01L 21/324 (2013.01); H01L 27/14687 (2013.01); H01L 29/04 (2013.01); H01L 29/36 (2013.01);
Abstract
An epitaxial wafer that includes a silicon wafer and an epitaxial layer on the silicon wafer. The silicon wafer contains hydrogen that has a concentration profile including a first peak and a second peak. A hydrogen peak concentration of the first peak and a hydrogen peak concentration of the second peak are each not less than 1×10atoms/cm.